Table of Contents

Cover

Title Page

Copyright

About the Authors

Preface

Chapter 1: Introduction

1.1 Progress in Electronics

1.2 Features and Brief History of Silicon Carbide

1.3 Outline of This Book

References

Chapter 2: Physical Properties of Silicon Carbide

2.1 Crystal Structure

2.2 Electrical and Optical Properties

2.3 Thermal and Mechanical Properties

2.4 Summary

References

Chapter 3: Bulk Growth of Silicon Carbide

3.1 Sublimation Growth

3.2 Polytype Control in Sublimation Growth

3.3 Defect Evolution and Reduction in Sublimation Growth

3.4 Doping Control in Sublimation Growth

3.5 High- Temperature Chemical Vapor Deposition

3.6 Solution Growth

3.7 3C-SiC Wafers Grown by Chemical Vapor Deposition

3.8 Wafering and Polishing

3.9 Summary

References

Chapter 4: Epitaxial Growth of Silicon Carbide

4.1 Fundamentals of SiC Homoepitaxy

4.2 Doping Control in SiC CVD

4.3 Defects in SiC Epitaxial Layers

4.4 Fast Homoepitaxy of SiC

4.5 SiC Homoepitaxy on Non-standard Planes

4.6 SiC Homoepitaxy by Other Techniques

4.7 Heteroepitaxy of 3C-SiC

4.8 Summary

References

Chapter 5: Characterization Techniques and Defects in Silicon Carbide

5.1 Characterization Techniques

5.2 Extended Defects in SiC

5.3 Point Defects in SiC

5.4 Summary

References

Chapter 6: Device Processing of Silicon Carbide

6.1 Ion Implantation

6.2 Etching

6.3 Oxidation and Oxide/SiC Interface Characteristics

6.4 Metallization

6.5 Summary

References

Chapter 7: Unipolar and Bipolar Power Diodes

7.1 Introduction to SiC Power Switching Devices

7.2 Schottky Barrier Diodes (SBDs)

7.3 pn and pin Junction Diodes

7.4 Junction-Barrier Schottky (JBS) and Merged pin-Schottky (MPS) Diodes

References

Chapter 8: Unipolar Power Switching Devices

8.1 Junction Field-Effect Transistors (JFETs)

8.2 Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)

References

Chapter 9: Bipolar Power Switching Devices

9.1 Bipolar Junction Transistors (BJTs)

9.2 Insulated-Gate Bipolar Transistors (IGBTs)

9.3 Thyristors

References

Chapter 10: Optimization and Comparison of Power Devices

10.1 Blocking Voltage and Edge Terminations for SiC Power Devices

10.2 Optimum Design of Unipolar Drift Regions

10.3 Comparison of Device Performance

References

Chapter 11: Applications of Silicon Carbide Devices in Power Systems

11.1 Introduction to Power Electronic Systems

11.2 Basic Power Converter Circuits

11.3 Power Electronics for Motor Drives

11.4 Power Electronics for Renewable Energy

11.5 Power Electronics for Switch-Mode Power Supplies

11.6 Performance Comparison of SiC and Silicon Power Devices

References

Chapter 12: Specialized Silicon Carbide Devices and Applications

12.1 Microwave Devices

12.2 High-Temperature Integrated Circuits

12.3 Sensors

References

Appendix A: Incomplete Dopant Ionization in 4H-SiC

References

Appendix B: Properties of the Hyperbolic Functions

Appendix C: Major Physical Properties of Common SiC Polytypes

C.1 Properties

C.2 Temperature and/or Doping Dependence of Major Physical Properties

References

Index

End User License Agreement

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Guide

Cover

Table of Contents

Preface

Begin Reading

List of Illustrations

Figure 1.1

Figure 1.2

Figure 1.3

Figure 2.1

Figure 2.2

Figure 2.3

Figure 2.4

Figure 2.5

Figure 2.6

Figure 2.7

Figure 2.8

Figure 2.9

Figure 2.10

Figure 2.11

Figure 2.12

Figure 2.13

Figure 2.14

Figure 2.15

Figure 2.16

Figure 2.17

Figure 2.18

Figure 2.19

Figure 2.20

Figure 2.21

Figure 2.22

Figure 2.23

Figure 2.24

Figure 2.25

Figure 2.26

Figure 3.1

Figure 3.2

Figure 3.3

Figure 3.4

Figure 3.5

Figure 3.6

Figure 3.7

Figure 3.8

Figure 3.9

Figure 3.10

Figure 3.11

Figure 3.12

Figure 3.13

Figure 3.14

Figure 3.15

Figure 3.16

Figure 3.17

Figure 3.18

Figure 3.19

Figure 3.20

Figure 3.21

Figure 3.22

Figure 3.23

Figure 3.24

Figure 3.25

Figure 3.26

Figure 3.27

Figure 3.28

Figure 3.29

Figure 3.30

Figure 3.31

Figure 3.32

Figure 4.1

Figure 4.2

Figure 4.3

Figure 4.4

Figure 4.5

Figure 4.6

Figure 4.7

Figure 4.8

Figure 4.9

Figure 4.10

Figure 4.11

Figure 4.12

Figure 4.13

Figure 4.14

Figure 4.15

Figure 4.16

Figure 4.17

Figure 4.18

Figure 4.19

Figure 4.20

Figure 4.21

Figure 4.22

Figure 4.23

Figure 4.24

Figure 4.25

Figure 4.26

Figure 4.27

Figure 4.28

Figure 4.29

Figure 4.30

Figure 4.31

Figure 4.32

Figure 4.33

Figure 4.34

Figure 4.35

Figure 4.36

Figure 4.37

Figure 4.38

Figure 4.39

Figure 4.40

Figure 4.41

Figure 4.42

Figure 5.1

Figure 5.2

Figure 5.3

Figure 5.4

Figure 5.5

Figure 5.6

Figure 5.7

Figure 5.8

Figure 5.9

Figure 5.10

Figure 5.11

Figure 5.12

Figure 5.13

Figure 5.14

Figure 5.15

Figure 5.16

Figure 5.17

Figure 5.18

Figure 5.19

Figure 5.20

Figure 5.21

Figure 5.22

Figure 5.23

Figure 5.24

Figure 5.25

Figure 5.26

Figure 5.27

Figure 5.28

Figure 5.29

Figure 5.30

Figure 5.31

Figure 5.32

Figure 5.33

Figure 5.34

Figure 5.35

Figure 5.36

Figure 5.37

Figure 5.38

Figure 5.39

Figure 5.40

Figure 5.41

Figure 5.42

Figure 5.43

Figure 5.44

Figure 5.45

Figure 5.46

Figure 5.47

Figure 5.48

Figure 5.49

Figure 5.50

Figure 5.51

Figure 5.52

Figure 5.53

Figure 5.54

Figure 5.55

Figure 5.56

Figure 5.57

Figure 5.58

Figure 5.59

Figure 5.60

Figure 6.1

Figure 6.2

Figure 6.3

Figure 6.4

Figure 6.5

Figure 6.6

Figure 6.7

Figure 6.8

Figure 6.9

Figure 6.10

Figure 6.11

Figure 6.12

Figure 6.13

Figure 6.14

Figure 6.15

Figure 6.16

Figure 6.17

Figure 6.18

Figure 6.19

Figure 6.20

Figure 6.21

Figure 6.22

Figure 6.23

Figure 6.24

Figure 6.25

Figure 6.26

Figure 6.27

Figure 6.28

Figure 6.29

Figure 6.30

Figure 6.31

Figure 6.32

Figure 6.33

Figure 6.34

Figure 6.35

Figure 6.36

Figure 6.37

Figure 6.38

Figure 6.39

Figure 6.40

Figure 6.41

Figure 6.42

Figure 6.43

Figure 6.44

Figure 6.45

Figure 6.46

Figure 6.47

Figure 6.48

Figure 6.49

Figure 6.50

Figure 6.51

Figure 6.52

Figure 6.53

Figure 6.54

Figure 6.55

Figure 6.56

Figure 6.57

Figure 6.58

Figure 6.59

Figure 6.60

Figure 6.61

Figure 6.62

Figure 6.63

Figure 6.64

Figure 6.65

Figure 6.66

Figure 6.67

Figure 6.68

Figure 6.69

Figure 6.70

Figure 6.71

Figure 6.72

Figure 6.73

Figure 6.74

Figure 6.75

Figure 6.76

Figure 6.77

Figure 6.78

Figure 6.79

Figure 6.80

Figure 6.81

Figure 6.82

Figure 6.83

Figure 6.84

Figure 6.85

Figure 6.86

Figure 7.1

Figure 7.2

Figure 7.3

Figure 7.4

Figure 7.5

Figure 7.6

Figure 7.7

Figure 7.8

Figure 7.9

Figure 7.10

Figure 7.11

Figure 7.12

Figure 7.13

Figure 7.14

Figure 7.15

Figure 7.16

Figure 7.17

Figure 7.18

Figure 7.19

Figure 7.20

Figure 7.21

Figure 8.1

Figure 8.2

Figure 8.3

Figure 8.4

Figure 8.5

Figure 8.6

Figure 8.7

Figure 8.8

Figure 8.9

Figure 8.10

Figure 8.11

Figure 8.12

Figure 8.13

Figure 8.14

Figure 8.15

Figure 8.16

Figure 8.17

Figure 8.18

Figure 8.19

Figure 8.20

Figure 8.21

Figure 8.22

Figure 8.23

Figure 8.24

Figure 8.25

Figure 8.26

Figure 8.27

Figure 8.28

Figure 8.29

Figure 8.30

Figure 8.31

Figure 8.32

Figure 8.33

Figure 8.34

Figure 8.35

Figure 8.36

Figure 8.37

Figure 9.1

Figure 9.2

Figure 9.3

Figure 9.4

Figure 9.5

Figure 9.6

Figure 9.7

Figure 9.8

Figure 9.9

Figure 9.10

Figure 9.11

Figure 9.12

Figure 9.13

Figure 9.14

Figure 9.15

Figure 9.16

Figure 9.17

Figure 9.18

Figure 9.19

Figure 9.20

Figure 9.21

Figure 9.22

Figure 9.24

Figure 9.24

Figure 9.25

Figure 9.26

Figure 9.27

Figure 9.28

Figure 9.29

Figure 9.30

Figure 9.31

Figure 9.32

Figure 9.33

Figure 9.34

Figure 9.35

Figure 9.36

Figure 9.37

Figure 9.38

Figure 9.39

Figure 9.40

Figure 9.41

Figure 9.42

Figure 9.43

Figure 9.44

Figure 10.1

Figure 10.2

Figure 10.3

Figure 10.4

Figure 10.5

Figure 10.6

Figure 10.7

Figure 10.8

Figure 10.9

Figure 10.10

Figure 10.11

Figure 10.12

Figure 10.13

Figure 10.14

Figure 10.15

Figure 10.16

Figure 10.17

Figure 10.18

Figure 10.19

Figure 10.20

Figure 10.21

Figure 10.22

Figure 10.23

Figure 10.24

Figure 10.25

Figure 10.26

Figure 10.27

Figure 10.28

Figure 10.29

Figure 10.30

Figure 10.31

Figure 10.32

Figure 10.33

Figure 10.34

Figure 10.35

Figure 10.36

Figure 11.1

Figure 11.2

Figure 11.3

Figure 11.4

Figure 11.5

Figure 11.6

Figure 11.7

Figure 11.8

Figure 11.9

Figure 11.10

Figure 11.11

Figure 11.12

Figure 11.13

Figure 11.14

Figure 11.15

Figure 11.16

Figure 11.17

Figure 11.18

Figure 11.19

Figure 11.20

Figure 11.21

Figure 11.22

Figure 11.23

Figure 11.24

Figure 11.25

Figure 11.26

Figure 11.27

Figure 11.28

Figure 11.29

Figure 11.30

Figure 11.31

Figure 11.32

Figure 11.33

Figure 11.34

Figure 11.35

Figure 11.36

Figure 11.37

Figure 11.38

Figure 11.39

Figure 11.40

Figure 11.41

Figure 11.42

Figure 11.43

Figure 11.44

Figure 11.45

Figure 11.46

Figure 11.47

Figure 11.48

Figure 11.49

Figure 11.50

Figure 11.51

Figure 12.1

Figure 12.2

Figure 12.3

Figure 12.4

Figure 12.5

Figure 12.6

Figure 12.7

Figure 12.8

Figure 12.9

Figure 12.10

Figure 12.11

Figure 12.12

Figure 12.13

Figure 12.14

Figure 12.15

Figure 12.16

Figure 12.17

Figure 12.18

Figure 12.19

Figure 12.20

Figure 12.21

Figure A.1

Figure A.2

Figure A.3

Figure A.4

Figure A.5

Figure B.1

Figure B.2

List of Tables

Table 2.1

Table 2.2

Table 2.3

Table 2.4

Table 2.5

Table 2.6

Table 2.7

Table 3.1

Table 3.2

Table 3.3

Table 3.4

Table 4.1

Table 4.2

Table 4.3

Table 5.1

Table 5.2

Table 5.3

Table 5.4

Table 5.5

Table 5.6

Table 6.1

Table 6.2

Table 6.3

Table 6.4

Table 7.1

Table 8.1

Table 9.1

Table 11.1

Table 12.1

Table 12.2

FUNDAMENTALS OF SILICON CARBIDE TECHNOLOGY

GROWTH, CHARACTERIZATION, DEVICES, AND APPLICATIONS

Tsunenobu Kimoto

Kyoto University, Japan

James A. Cooper

Purdue University, USA

This edition first published 2014

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Library of Congress Cataloging-in-Publication Data

Kimoto, Tsunenobu, 1963–

Fundamentals of silicon carbide technology : growth, characterization, devices and applications / Tsunenobu Kimoto, James A. Cooper.

pages cm

Includes bibliographical references and index.

ISBN 978-1-118-31352-7 (cloth)

1. Silicon carbide. 2. Semiconductors. 3. Integrated circuits. I. Cooper, James A., 1946– II. Title. III. Title: Fundamentals of SiC technology.

TK7871.15.S56K56 2014

621.3815′2—dc23

2014016546

1 2014

About the Authors

Tsunenobu Kimoto received the B.E. and M.E. degrees in Electrical Engineering from Kyoto University, Japan, in 1986 and 1988, respectively. He joined Sumitomo Electric Industries, LTD in 1988, where he conducted research and development of amorphous Si solar cells and semiconducting diamond material. In 1990, he started his academic career as a Research Associate at Kyoto University, and received the Ph.D. degree from Kyoto University in 1996, based on his work on SiC growth and device fabrication. In 1996–1997, he was a visiting scientist at Linköping University, Sweden. He is currently Professor at the Department of Electronic Science and Engineering, Kyoto University.

His main research activity includes SiC epitaxial growth, optical and electrical characterization, defect electronics, ion implantation, MOS physics, and high-voltage devices. He has also been involved in nanoscale Si, Ge devices, novel materials for nonvolatile memory, and GaN-based electron devices. He is a member of IEEE, MRS, JSAP, IEICE, and IEE.

James A. Cooper received his BSEE and MSEE degrees from Mississippi State University and Stanford University in 1968 and 1969, respectively. From 1968 to 1970 he was a staff member at Sandia National Laboratories. He attended Purdue University from 1970 to 1973, where he received his Ph.D. for generalizing the theory of the MOS conductance technique. He joined Bell Laboratories, Murray Hill, in 1973. At Bell Labs he designed CMOS integrated circuits, including AT&T's first microprocessor, and conducted research on high-field transport in silicon inversion layers. He joined the faculty of Purdue University in 1983 and is currently Professor of Electrical and Computer Engineering.

From 1983 to 1990 he explored dynamic memories in GaAs, and he began working in SiC in 1990. His group demonstrated the first SiC DMOSFETs and the first SiC digital integrated circuits, and contributed to the development of Schottky diodes, UMOSFETs, lateral DMOSFETs, BJTs, and IGBTs. They have also investigated a variety of other SiC devices, including thyristors, CCDs, MESFETs, SITs, and IMPATT diodes.

A Life Fellow of the IEEE, Professor Cooper has held the Charles William Harrison and Jai N. Gupta chairs in Electrical and Computer Engineering at Purdue, and was founding co-director of Purdue's Birck Nanotechnology Center.

Preface

Power semiconductor devices are attracting increasing attention as key components in a variety of power electronic systems. The major applications of power devices include power supplies, motor controls, renewable energy, transportation, telecommunications, heating, robotics, and electric utility transmission/distribution. The utilization of semiconductor power devices in these systems can enable significant energy savings, increased conservation of fossil fuels, and reduced environmental pollution.

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